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吉林大学材料科学与工程学院学术报告信息单“Searching for Transformative Materials beyond Graphene: the Rise of Indium Selenide”
发表于: 2019-03-08 18:14  点击:

报告题目:Searching for Transformative Materials beyond Graphene: the Rise of Indium Selenide

报告人:Prof. Amalia Patanè

主持人(邀请人): 张立军 教授

报告时间:2019314日上午9:00

报告地点:南区唐敖庆楼D429报告厅

主办单位:材料科学与工程学院、汽车材料教育部重点实验室

摘要:Atomically thin layers of van der Waals (vdW) crystals and their heterostructures offer opportunities to study and exploit a wide range of quantum phenomena. These crystals have strong covalent atomic bonding in the two-dimensional (2D) planes and vdW attraction between the layers, enabling the isolation of high-quality stable thin films down to the atomic monolayer thickness. The search for transformative materials beyond traditional covalent semiconductors, such as Si, has led to fast growing activities on new materials and the exciting growing development of the metal chalcogenide indium selenide, InSe. This 2D material has a band gap energy that increases markedly with decreasing layer thickness down to a single layer and a high, broad photoresponsivity that extends from the ultra-violet (UV) to the infrared (IR) range. Also, it has a relatively low mass conduction band electrons even in atomically thin films and a high electron mobility, larger than in Si-based field effect transistors (FETs). The fundamental science of 2D InSe is a rapidly developing and vibrant field and more breakthroughs are expected as new concepts emerge from experiment and theory. In this talk, I will review my recent research on this new 2D system and discuss emerging activities and prospects for ultra-thin digital electronics and photonics.

报告人简介:Prof. Amalia Patanè studied at the University of Rome “La Sapienza” where she graduated with first class honours in Physics in 1994 and obtained a PhD in 1997. She worked as an EPSRC Research Associate (1998/2002) at the University of Nottingham, appointed Lecturer at Nottingham in 2002, and later promoted to Associate Professor (2006) and Professor of Physics (2011). Her research focuses on the quantum behavior of electrons in semiconductor materials and heterostructure devices. She has published over 200 papers, including articles in Science and Nature journals, and has given > 50 seminars and invited and plenary talks at international conferences. Her research achievements were recognized by the Sir Charles Vernon Boys Medal and Prize of the Institute of Physics (2007), an EPSRC Advanced Research Fellowship (2004/2009), a Leverhulme Trust Research Fellowship (2017/19), and the Chinese Academy of Sciences President’s International Fellowship (2018/19). She leads Nottingham’s research within the EU Graphene Flagship (2014/2020) and the UK Membership of the European Magnetic Field Laboratory (EMFL), a UK national facility for research with high magnetic fields (2015/2020), awarded the ESFRI Landmark status in 2016. She is a member ofthe Executive Board of Nottingham’s Beacon Programme on advanced technologies and of international committees, including the International Union of Pure and Applied Physics Commission (IUPAP, Commission 8, Vice Chair 2018-20).

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